Imashini ikoresha Silicon Carbide (SiC) ikoreshwa mu gukaraba ibidukikije bishyushye cyane n'ibikomoka kuri plasma
Agace k'ibumba gashingiye kuri SiC gakozwe muri karubide ya silikoni ifite pure nyinshi (batch S1111, SiC 99.72%, free Si 0.05%). Gatanga imbaraga zo kuzunguruka zingana na 449 MPa, gukomera kwa 3.12 MPa·m¹/², na modulus ya elastic ya 457 GPa. Uburyo busanzwe bwo gutwara ubushyuhe (120–150 W/m·K) n'ubushyuhe buke (4.0–4.5×10⁻⁶/℃) bituma ubushyuhe burushaho kwiyongera kandi hagafatwa warpage ntoya mu gihe cy'ubushyuhe. Agace k'ibumba gashobora gushyirwaho nk'agace k'ibumba gafite imyenge (gas flow) cyangwa agace gasanzwe gafite grooved. Hamwe n'ubushyuhe ntarengwa bwa 1600–1700°C (nta mutwaro) kandi gafite ubudahangarwa budasanzwe bwo kurwanya isuri muri plasma, aka gace ni keza cyane mu gutunganya wafer mu bushyuhe bwinshi (annealing, RTP) no mu byumba by'ibumba aho alumina chucks igabanuka.
Ibisobanuro(hashingiwe kuri raporo y'ikizamini cya SiC S1111 cyatanzwe n'agaciro gasanzwe):
| Umutungo | Agaciro |
| Ibikoresho | SiC (99.72% SiC, 0.05% Si y'ubuntu) |
| Ubucucike | 3.10–3.15 g/cm³ |
| Kunywa Amazi | 0% |
| Imbaraga zo Kongera Uburemere | 449 MPa |
| Gukomera kw'imvune | 3.12 MPa·m¹/² |
| Modulus irashya | 457 GPa |
| Ubukomere bwa Vickers | 25–28 GPa |
| Ubushobozi bwo gutwara ubushyuhe | 120–150 W/m·K |
| CTE (25–1000°C) | 4.0–4.5×10⁻⁶/℃ |
| Ubushyuhe bwo gukoresha ntarengwa (nta mutwaro) | 1600–1700°C |
| Ubugari (burenga mm 300) | ≤5 μm |
| Kurangiza ubuso | Ra ≤0.4 μm (ifite imigozi) |
Porogaramu:
● Gupfunyika mu bushyuhe bwinshi (gufunga, RTP, gukura kwa epitaxial)
● Plasma etch chuck ifite ubudahangarwa bwinshi bwa fluorine
● Gufata wafer ntoya hamwe n'ubushyuhe/ubukonje bungana
● Agace k'imyobo gafasha mu gutera inkunga wafer idahuye n'aho iherereye
Inganda:
SiC sintering → Gusya neza ubugari n'imiterere y'ubuso → Gushyiraho imiterere y'imyenge y'ubugari (kuri vacuum chuck) → Guhuza → Gusukura hakoreshejwe ikoranabuhanga. Buri gacupa kagenzurwa 100% kugira ngo harebwe niba gafite ubugari (interferometer ya laser) n'ubugari bw'ubugari (ikizamini cy'amazi).
Igenzura ry'Ubuziranenge:
● Igenzura ry'ingano ya CMM (umurambararo, ubunini, aho umwobo uherereye)
● Igipimo cy'ubugari kuri buri kimwe cya ASTM
● Ikizamini cyo gusohora helium (ku bijyanye n'udupfunyika tw'amazi)
● Igenzura ry'imbaraga zo guhindagurika kuri buri cyiciro (reba raporo y'ikizamini)
Ibyiza ugereranije na Alumina Chucks:
● Ubushyuhe bwinshi (120–150 vs 32 W/m·K kuri alumina) – Kwimura ubushyuhe byihuta inshuro 4
● CTE yo hasi (4.0 vs 7.2×10⁻⁶/℃) – igabanya ubushyuhe bwa wafer
● Ubudahangarwa bw'amaraso buhanitse cyane – igihe kirekire cy'ubuzima mu gice cy'urumuri cya fluorine ni 10×
● Ubushyuhe bwinshi bwo gukoresha (1600°C ugereranije na 800°C kuri alumina)
Guhindura:
● Ubuso bufite imyenge cyangwa imiyoboro
● Ingano ya mm 100–450, izengurutse cyangwa kare
● Impeta yo gufunga impande cyangwa ibice by'ahantu hadakoreshejwe umwuka
● Uburyo bwo gushyira inyuma y'icyuma mu buryo bukomeye cyane
Amakuru yose ya tekiniki yavuzwe haruguru aturuka muri raporo y'ikizamini cyatanzwe (batch S1111). Agaciro k'ubushyuhe n'ubukana ni ibisanzwe kuri uru rwego rwa SiC. Uduce twa SiC dufite imyobo dukeneye gutunganywa by'inyongera; nyamuneka mubaze niba hari porosity runaka n'ingano y'imyobo.
