Hamwe n'ibyiza byuzuye by'ibikoresho gakondo bya Al2O3 na BeO, ceramic ya Aluminium Nitride (AlN), ifite ubushobozi bwo gutwara ubushyuhe bwinshi (uburyo bwo gutwara ubushyuhe bwa monocrystal ari 275W/m▪k, uburyo bwo gutwara ubushyuhe bwa polycrystal ari 70~210W/m▪k), uburinganire buke bwa dielectric, ubwiyongere bw'ubushyuhe buhuye na silicon imwe ya kristale, hamwe n'ubushobozi bwiza bwo gukingira amashanyarazi, ni ibikoresho byiza ku bikoresho bya circuit substrates no gupakira mu nganda za microelectronics. Ni kandi ibikoresho by'ingenzi ku bice by'imiterere ya ceramic bishyushye cyane bitewe n'imiterere myiza ya mekanike ishyushye cyane, imiterere y'ubushyuhe n'ubudahangarwa bwa shimi.
Ubucucike bwa AlN ni 3.26g/cm3, ubukana bwa MOHS ni 7-8, ubushyuhe bw'icyumba burenze 1016Ωm, naho ubushyuhe burenze 3.5×10-6/℃ (ubushyuhe bw'icyumba ni 200℃). Ibumba rya AlN ry'umwimerere nta bara kandi ribonerana, ariko riba rifite amabara atandukanye nk'imvi, imvi y'umweru cyangwa umuhondo woroshye, bitewe n'imyanda.
Uretse kuba ifite ubushyuhe bwinshi, ibumba rya AlN rifite kandi ibyiza bikurikira:
1. Gukingira neza amashanyarazi;
2. Ingano isa y'ubushyuhe hamwe na monocrystal ya silikoni, iruta ibikoresho nka Al2O3 na BeO;
3. Ingufu nyinshi za mekanike n'imbaraga zisa zo guhindagurika hamwe n'ibice bya Al2O3;
4. Igihombo giciriritse cya dielectric constant na dielectric;
5. Ugereranyije na BeO, ubushyuhe bwa AlN ceramics ntibugira ingaruka nyinshi ku bushyuhe, cyane cyane hejuru ya 200°C;
6. Kurwanya ubushyuhe bwinshi no kurwanya ingese;
7. Ntibihumanya;
8. Bikoreshwa mu nganda za semiconductor, inganda zikora ibyuma bya chimique n'izindi nganda.
Igihe cyo kohereza: 14 Nyakanga-2023